STP7NK80Z MOSFET 晶体管

STP7NK80Z

N-channel 800 V, 1.5 Ω, 5.2 A, TO-220,TO-220FP,D2PAK,I2PAK  Zener-protected SuperMESH™ Power MOSFET

Description

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage Power MOSFETs including revolutionary MDmesh™ products.

Features STP7NK80Z

■ Extremely high dv/dt capability

■ 100% avalanche tested

■ Gate charge minimized

■ Very low intrinsic capacitances

■ Very good manufacturing repeatability

Applications

■ Switching application

型号: STP7NK80Z

制造商: STMicroelectronics 

产品种类: MOSFET 

RoHS:  无铅环保  

技术: Si 

安装风格: Through Hole 

封装 / 箱体: TO-220-3 

通道数量: 1 Channel 

晶体管极性: N-Channel 

Vds-漏源极击穿电压: 800 V 

Id-连续漏极电流: 5.2 A 

Rds On-漏源导通电阻: 1.8 Ohms 

Vgs - 栅极-源极电压: 30 V 

Qg-栅极电荷: 40 nC 

最小工作温度: - 55 C 

最大工作温度: + 150 C 

Pd-功率耗散: 125 W 

配置: Single 

通道模式: Enhancement 

商标名: SuperMESH 

封装: Tube 

高度: 9.15 mm  

长度: 10.4 mm  

系列: STP7NK80Z  

晶体管类型: 1 N-Channel  

类型: MOSFET  

宽度: 4.6 mm  

商标: STMicroelectronics  

正向跨导 - 最小值: 5 S  

下降时间: 20 ns  

产品类型: MOSFET  

上升时间: 12 ns  

工厂包装数量: 50  

子类别: MOSFETs  

典型关闭延迟时间: 45 ns  

典型接通延迟时间: 20 ns  

单位重量: 1.400 g