TPH12008NH,L1Q MOSFET Toshiba

TPH12008NH,L1Q

MOSFET N-Ch 80V 1490pF 22nC 12.3mOhm 44A 48W

Applications TPH12008NH,L1Q

• DC-DC Converters

• Switching Voltage Regulators

• Motor Drivers

Features TPH12008NH,L1Q

(1) Small, thin package

(2) High-speed switching

(3) Small gate charge: QSW = 8.1 nC (typ.)

(4) Low drain-source on-resistance: RDS(ON) = 10.1 mΩ (typ.) (VGS = 10 V)

(5) Low leakage current: IDSS = 10 μA (max) (VDS = 80 V)

(6) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.3 mA)

Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) TPH12008NH,L1Q

Characteristics  Drain-source voltage  Gate-source voltage  Drain current (DC)  Drain current (DC)  Drain current (pulsed)  Power dissipation  Power dissipation  Power dissipation  Single-pulse avalanche energy  Avalanche current  Channel temperature  Storage temperature  (Silicon limit)  (Tc = 25)  (t = 1 ms)  (Tc = 25)  (t = 10 s)   (t = 10 s)  (Note 1), (Note 2)  (Note 1)   (Note 1)  (Note 3)  (Note 4)  (Note 5)  Symbol  VDSS  VGSS  ID  ID  IDP  PD   PD  PD  EAS  IAR  Tch  Tstg  Rating  80  ±20  44  24  97  48  2.8  1.6  58  24  150  -55 to 150  Unit  V  A   W  W   W  mJ  A  

Static Characteristics (Ta = 25 unless otherwise specified)  

Characteristics  Gate leakage current  Drain cut-off current  Drain-source breakdown voltage  Gate threshold voltage  Drain-source on-resistance  Symbol  IGSS  IDSS  V(BR)DSS  V(BR)DSX  Vth  RDS(ON)  Test Condition  VGS = ±20 V, VDS = 0 V  VDS = 80 V, VGS = 0 V  ID = 10 mA, VGS = 0 V  ID = 10 mA, VGS = -20 V  VDS = 10 V, ID = 0.3 mA  VGS = 10 V, ID = 12 A  Min      80  60  2.0    Typ.            10.1  Max  ±0.1  10      4.0  12.3  Unit  μA  V  mΩ