NTMFS5C430NLT1G MOSFET ON

NTMFS5C430NLT1G

Power MOSFET NFET SO8FL 40 V, 1.4 m, 200 A, Single N−Channel

NTMFS5C430NLT1G Features

• Small Footprint (5x6 mm) for Compact Design

• Low RDS(on) to Minimize Conduction Losses

• Low QG and Capacitance to Minimize Driver Losses

• These Devices are Pb−Free and are RoHS Compliant

型号: NTMFS5C430NLT1G 

制造商: ON Semiconductor 

产品种类: MOSFET 

RoHS:  无铅环保  

技术: Si 

安装风格: SMD/SMT 

封装 / 箱体: SO-FL-8 

通道数量: 1 Channel 

晶体管极性: N-Channel 

Vds-漏源极击穿电压: 40 V 

Id-连续漏极电流: 200 A 

Rds On-漏源导通电阻: 2.2 mOhms 

Vgs th-栅源极阈值电压: 1.2 V 

Vgs - 栅极-源极电压: 20 V 

Qg-栅极电荷: 70 nC 

最小工作温度: - 55 ℃ 

最大工作温度: + 175 ℃ 

配置: Single 

Pd-功率耗散: 110 W 

通道模式: Enhancement 

封装: Cut Tape 

封装: Reel 

商标: ON Semiconductor  

下降时间: 9 ns  

产品类型: MOSFET  

上升时间: 140 ns  

工厂包装数量: 1500  

子类别: MOSFETs  

典型关闭延迟时间: 31 ns  

典型接通延迟时间: 15 ns

NTMFS5C430NLT1G MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Parameter Symbol Value Unit

Drain−to−Source Voltage VDSS 40 V

Gate−to−Source Voltage VGS ±20 V

Continuous Drain

Current RJC

(Notes 1, 3) Steady

State

TC = 25°C ID 200 A

TC = 100°C 140

Power Dissipation

RJC (Note 1)

TC = 25°C PD 110 W

TC = 100°C 53

Continuous Drain

Current RJA

(Notes 1, 2, 3) Steady

State

TA = 25°C ID 38 A

TA = 100°C 27

Power Dissipation

RJA (Notes 1 & 2)

TA = 25°C PD 3.8 W

TA = 100°C 1.9

Pulsed Drain Current TA = 25°C, tp = 10 s IDM 900 A

Operating Junction and Storage Temperature TJ, Tstg −55 to +175 °C Sou