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TK6A65D(STA4,Q,M)
MOSFET N-Ch FET 650V 4.0s IDSS 10 uA .95 Ohm Silicon N Channel MOS Type (π-MOS VII)
Switching Regulator Applications TK6A65D(STA4,Q,M)
• Low drain-source ON resistance: RDS (ON) = 0.95 Ω (typ.)
• High forward transfer admittance: ⎪Yfs⎪ = 4.0 S (typ.)
• Low leakage current: IDSS = 10 μA (max) (VDS = 650 V)
• Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C) TK6A65D(STA4,Q,M)
Characteristics Symbol Rating Unit Drain-source voltage VDSS 650 V Gate-source voltage VGSS ±30 V DC (Note 1) ID 6 Drain current Pulse (Note 1) IDP 24 A Drain power dissipation (Tc = 25°C) PD 45 W Single pulse avalanche energy (Note 2) EAS 281 mJ Avalanche current IAR 6 A Repetitive avalanche energy (Note 3) EAR 4.5 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C
Source-Drain Ratings and Characteristics (Ta = 25°C) TK6A65D(STA4,Q,M)
Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR ⎯ ⎯ ⎯ 6 A Pulse drain reverse current (Note 1) IDRP ⎯ ⎯ ⎯ 24 A Forward voltage (diode) VDSF IDR = 6 A, VGS = 0 V ⎯ ⎯ −1.7 V Reverse recovery time trr ⎯ 1300 ⎯ ns Reverse recovery charge Qrr IDR = 6 A, VGS = 0 V, dIDR/dt = 100 A/μs ⎯ 10 ⎯ μC
TK6A65D(STA4,Q,M)
TOSHIBA(东芝)
TO-220FP
无铅环保型
直插式
Through Hole
: 1 Channel
: N-Channel
: 1.11 Ohms
: 6 A