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TK6A80E,S4X
MOSFET PLN MOS 800V 1700m (VGS=10V) TO-220SIS Silicon N-Channel MOS (π-MOS)
型号: TK6A80E,S4X
制造商: Toshiba
产品种类: MOSFET
RoHS: 无铅环保
技术: Si
安装风格: Through Hole
封装 / 箱体: TO-220FP-3
通道数量: 1 Channel
晶体管极性: N-Channel
Vds-漏源极击穿电压: 800 V
Id-连续漏极电流: 6 A
Rds On-漏源导通电阻: 1.35 Ohms
Vgs th-栅源极阈值电压: 4 V
Vgs - 栅极-源极电压: 30 V
Qg-栅极电荷: 32 nC
最小工作温度: - 55 C
最大工作温度: + 150 C
Pd-功率耗散: 45 W
配置: Single
通道模式: Enhancement
高度: 15 mm
长度: 10 mm
系列: TK6A80E
晶体管类型: 1 N-Channel
宽度: 4.5 mm
商标: Toshiba
下降时间: 15 ns
产品类型: MOSFET
上升时间: 20 ns
工厂包装数量: 50
子类别: MOSFETs
典型关闭延迟时间: 85 ns
典型接通延迟时间: 55 ns
单位重量: 6 g
Applications TK6A80E,S4X
• Switching Voltage Regulators
Features TK6A80E,S4X
(1) Low drain-source on-resistance: RDS(ON) = 1.35 Ω (typ.)
(2) Low leakage current : IDSS = 10 μA (max) (VDS = 640 V)
(3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.6 mA)
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) TK6A80E,S4X
Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Reverse drain current (DC) Reverse drain current (pulsed) Channel temperature Storage temperature Isolation voltage (RMS) Mounting torque (Tc = 25) (Note 1) (Note 1) (Note 2) (Note 1) (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR IDR IDRP Tch Tstg VISO(RMS) TOR Rating 800 ±30 6 18 45 308 6 6 18 150 -55 to 150 2000 0.6 Unit V A W mJ A V Nm
TK6A80E,S4X
TOSHIBA(东芝)
TO-220FP
无铅环保型
直插式
Through Hole
: 800 V
: 6 A
: 1.35 Ohms
: 32 nC