TK40E06N1,S1X MOSFET Toshiba

TK40E06N1,S1X

MOSFET 100V N-Ch PWR FET 60A 67W 23nC Silicon N-channel MOS (U-MOS-H)

型号: TK40E06N1,S1X 

制造商: Toshiba 

产品种类: MOSFET 

RoHS:  无铅环保  

技术: Si 

安装风格: Through Hole 

封装 / 箱体: TO-220-3 

通道数量: 1 Channel 

晶体管极性: N-Channel 

Vds-漏源极击穿电压: 60 V 

Id-连续漏极电流: 60 A 

Rds On-漏源导通电阻: 10.4 mOhms 

Vgs - 栅极-源极电压: 10 V 

Qg-栅极电荷: 23 nC 

Pd-功率耗散: 67 W 

配置: Single 

高度: 15.1 mm  

长度: 10.16 mm  

系列: TK40E06N1  

晶体管类型: 1 N-Channel  

宽度: 4.45 mm  

商标: Toshiba  

产品类型: MOSFET  

工厂包装数量: 50  

子类别: MOSFETs  

单位重量: 6 g

Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)  TK40E06N1,S1X

Characteristics  Drain-source voltage  Gate-source voltage  Drain current (DC)  Drain current (DC)  Drain current (pulsed)  Power dissipation  Single-pulse avalanche energy  Avalanche current  Channel temperature  Storage temperature  (Silicon limit)  (t = 1 ms)  (Tc = 25)  (Note 1), (Note 2)  (Note 1), (Note 3)  (Note 1)  (Note 4)  Symbol  VDSS  VGSS  ID  ID  IDP  PD  EAS  IAR  Tch  Tstg  Rating  60  ±20  60  40  125  67  40  40  150  -55 to 150  Unit  V  A  W  mJ  A  

Applications TK40E06N1,S1X

• Switching Voltage Regulators

Features

(1) Low drain-source on-resistance: RDS(ON) = 8.4 mΩ (typ.) (VGS = 10 V)

(2) Low leakage current: IDSS = 10 μA (max) (VDS = 60 V)

(3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.3 mA)