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TPH8R903NL,LQ
MOSFET N-Ch DTMOS VII-H 24W 630pF 38A 30V Silicon N-channel MOS (U-MOS-H)
型号: TPH8R903NL,LQ
制造商: Toshiba
产品种类: MOSFET
RoHS: 无铅环保
技术: Si
安装风格: SMD/SMT
封装 / 箱体: SOP-Advance-8
通道数量: 1 Channel
晶体管极性: N-Channel
Vds-漏源极击穿电压: 30 V
Id-连续漏极电流: 38 A
Rds On-漏源导通电阻: 10.2 mOhms
Vgs th-栅源极阈值电压: 2.3 V
Vgs - 栅极-源极电压: 20 V
Qg-栅极电荷: 9.8 nC
最小工作温度: - 55 C
最大工作温度: + 150 C
Pd-功率耗散: 24 W
配置: Single
通道模式: Enhancement
封装: Cut Tape
封装: Reel
高度: 0.95 mm
长度: 5 mm
系列: TPH8R903NL
晶体管类型: 1 N-Channel
宽度: 5 mm
商标: Toshiba
下降时间: 8.3 ns
产品类型: MOSFET
上升时间: 2.4 ns
工厂包装数量: 3000
子类别: MOSFETs
典型关闭延迟时间: 14 ns
典型接通延迟时间: 8.3 ns
单位重量: 851 mg
Applications TPH8R903NL,LQ
• Switching Voltage Regulators
• DC-DC Converters
Features TPH8R903NL,LQ
(1) High-speed switching
(2) Small gate charge: QSW = 2.5 nC (typ.)
(3) Low drain-source on-resistance: RDS(ON) = 10.2 mΩ (typ.) (VGS = 4.5 V)
(4) Low leakage current: IDSS = 10 μA (max) (VDS = 30 V)
(5) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA)
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulsed) Power dissipation Power dissipation Power dissipation Single-pulse avalanche energy Avalanche current Channel temperature Storage temperature (Silicon limit) (Tc = 25 ) (t = 1 ms) (Tc = 25 ) (t = 10 s) (t = 10 s) (Note 1), (Note 2) (Note 1) (Note 1) (Note 3) (Note 4) (Note 5) Symbol VDSS VGSS ID ID IDP PD PD PD EAS IAR Tch Tstg Rating 30 ±20 38 20 78 24 2.8 1.6 23 20 150 -55 to 150 Unit V A W mJ A
TPH8R903NL,LQ
TOSHIBA(东芝)
SOP
无铅环保型
贴片式
卷带编带包装
: 9.8 nC
: 20 V
: - 55 C
: + 150 C