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TK7A65D(STA4,Q,M)
MOSFET N-Ch MOS 7A 650V 45W 1200pF 0.98 Silicon N Channel MOS Type (π-MOSⅦ)
Switching Regulator Applications TK7A65D(STA4,Q,M)
• Low drain-source ON-resistance: RDS (ON) = 0.8 Ω(typ.)
• High forward transfer admittance: |Yfs| = 4.5 S (typ.)
• Low leakage current: IDSS = 10 μA (max) (VDS = 650 V)
• Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
型号: TK7A65D(STA4,Q,M)
制造商: Toshiba
产品种类: MOSFET
RoHS: 无铅环保
技术: Si
安装风格: Through Hole
封装 / 箱体: TO-220FP-3
通道数量: 1 Channel
晶体管极性: N-Channel
Vds-漏源极击穿电压: 650 V
Id-连续漏极电流: 7 A
Rds On-漏源导通电阻: 980 mOhms
Pd-功率耗散: 45 W
配置: Single
高度: 15 mm
长度: 10 mm
系列: TK7A65D
晶体管类型: 1 N-Channel
宽度: 4.5 mm
商标: Toshiba
产品类型: MOSFET
工厂包装数量: 50
子类别: MOSFETs
单位重量: 6 g
Absolute Maximum Ratings (Ta = 25°C) TK7A65D(STA4,Q,M)
Characteristics Symbol Rating Unit Drain-source voltage VDSS 650 V Gate-source voltage VGSS ±30 V DC (Note 1) ID 7 Drain current Pulse (Note 1) IDP 28 A Drain power dissipation (Tc = 25°C) PD 45 W Single pulse avalanche energy (Note 2) EAS 273 mJ Avalanche current IAR 7 A Repetitive avalanche energy (Note 3) EAR 4.5 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C
TK7A65D(STA4,Q,M)
TOSHIBA(东芝)
TO-220FP
无铅环保型
直插式
Through Hole
: 650 V
: 980 mOhms
: 45 W
: 7 A