TK22E10N1,S1X MOSFET Toshiba

TK22E10N1,S1X

MOSFET N-Ch PWR FET 52A 72W 100V VDSS

Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)  TK22E10N1,S1X

Characteristics  Drain-source voltage  Gate-source voltage  Drain current (DC)  Drain current (DC)  Drain current (pulsed)  Power dissipation  Single-pulse avalanche energy  Avalanche current  Channel temperature  Storage temperature  (Tc = 25)  (t = 1 ms)  (Tc = 25)  (Note 1)  (Note 1,2)   (Note 1)  (Note 3)  Symbol  VDSS  VGSS  ID  ID  IDP  PD  EAS  IAR  Tch  Tstg  Rating  100  ±20  52  22  102  72  48  22  150  -55 to 150  Unit  V  A  W  mJ  A  

Dynamic Characteristics (Ta = 25 unless otherwise specified)  TK22E10N1,S1X

Characteristics  Input capacitance  Reverse transfer capacitance  Output capacitance  Gate resistance  Switching time (rise time)  Switching time (turn-on time)  Switching time (fall time)  Switching time (turn-off time)  Symbol  Ciss  Crss  Coss  rg  tr  ton  tf  toff  Test Condition  VDS = 50 V, VGS = 0 V, f = 1 MHz    See Figure 6.2.1  Min  Typ.  1800  18  310  2.0  11  27  11  38  Max  Unit  pF  Ω  ns

Static Characteristics (Ta = 25 unless otherwise specified)  TK22E10N1,S1X

Characteristics  Gate leakage current  Drain cut-off current  Drain-source breakdown voltage  Drain-source breakdown voltage  Gate threshold voltage  Drain-source on-resistance  (Note 4)  Symbol  IGSS  IDSS  V(BR)DSS  V(BR)DSX  Vth  RDS(ON)  Test Condition  VGS = ±20 V, VDS = 0 V  VDS = 100 V, VGS = 0 V  ID = 10 mA, VGS = 0 V  ID = 10 mA, VGS = -20 V  VDS = 10 V, ID = 0.3 mA  VGS = 10 V, ID = 11 A  Min      100  65  2.0    Typ.            11.5  Max  ±0.1  10      4.0  13.8  Unit  μA  V  mΩ