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SSM3K339R,LF
MOSFETs Silicon N-Channel MOS Small Signal
Applications SSM3K339R
• Power Management Switches
• DC-DC Converters
Features SSM3K339R
(1) 1.8-V gate drive voltage.
(2) Low drain-source on-resistance
: RDS(ON) = 145 mΩ (typ.) (@VGS = 8.0 V, ID = 1.0 A)
RDS(ON) = 155 mΩ (typ.) (@VGS = 4.5 V, ID = 1.0 A)
RDS(ON) = 160 mΩ (typ.) (@VGS = 3.6 V, ID = 1.0 A)
RDS(ON) = 180 mΩ (typ.) (@VGS = 2.5 V, ID = 0.5 A)
RDS(ON) = 220 mΩ (typ.) (@VGS = 1.8 V, ID = 0.2 A)
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Power dissipation Channel temperature Storage temperature (t = 10 s) (Note 1) (Note 1), (Note 2) (Note 3) (Note 3) Symbol VDSS VGSS ID IDP PD Tch Tstg Rating 40 ±12 2.0 4.0 1 2 150 -55 to 150 Unit V A W
型号: SSM3K339R
制造商: Toshiba
产品种类: MOSFET
RoHS: 无铅环保
技术: Si
安装风格: SMD/SMT
封装 / 箱体: SOT-23F-3
通道数量: 1 Channel
晶体管极性: N-Channel
Vds-漏源极击穿电压: 40 V
Id-连续漏极电流: 2 A
Rds On-漏源导通电阻: 185 mOhms
Vgs - 栅极-源极电压: 8 V
Qg-栅极电荷: 1.1 nC
最大工作温度: + 150 C
Pd-功率耗散: 1 W
配置: Single
通道模式: Enhancement
封装: Cut Tape
封装: Reel
高度: 0.9 mm
长度: 2.9 mm
系列: SSM3K339
晶体管类型: 1 N-Channel
宽度: 1.3 mm
商标: Toshiba
正向跨导 - 最小值: 2 S
产品类型: MOSFET
工厂包装数量: 3000
子类别: MOSFETs
典型关闭延迟时间: 8 ns
典型接通延迟时间: 13 ns
单位重量: 8 mg
SSM3K339R,LF
TOSHIBA(东芝)
SOT-23F
无铅环保型
贴片式
卷带编带包装
: 40 V
: 1.1 nC
: 2 A
: 185 mOhms