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STF7LN80K5
MOSFET N-channel 800 V, 0.95 Ohm typ., 5 A MDmesh K5 Power MOSFET in a TO-220FP package
Description STF7LN80K5
This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
Applications
• Switching applications
Features
• Industry’s lowest RDS(on) x area
• Industry’s best figure of merit (FoM)
• Ultra-low gate charge
• 100% avalanche tested
• Zener-protected
型号: STF7LN80K5
制造商: STMicroelectronics
产品种类: MOSFET
RoHS: 无铅环保
技术: Si
安装风格: Through Hole
封装 / 箱体: TO-220FP-3
通道数量: 1 Channel
晶体管极性: N-Channel
Vds-漏源极击穿电压: 800 V
Id-连续漏极电流: 5 A
Rds On-漏源导通电阻: 1.15 Ohms
Vgs th-栅源极阈值电压: 3 V
Vgs - 栅极-源极电压: 30 V
Qg-栅极电荷: 12 nC
最小工作温度: - 55 C
最大工作温度: + 150 C
Pd-功率耗散: 25 W
配置: Single
通道模式: Enhancement
商标名: MDmesh
系列: STF7LN80K5
晶体管类型: 1 N-Channel
商标: STMicroelectronics
下降时间: 17.4 ns
产品类型: MOSFET
上升时间: 6.7 ns
工厂包装数量: 50
子类别: MOSFETs
典型关闭延迟时间: 23.6 ns
典型接通延迟时间: 9.3 ns
STF7LN80K5
ST(意法半导体)
TO-220FP
无铅环保型
直插式
Tube
: 1 Channel
: 800 V
: 5 A
: 1.15 Ohms