TK12A80W,S4X MOSFET Toshiba

TK12A80W,S4X

MOSFET N-Ch 800V 1400pF 23nC 11.5A 45W Silicon N-Channel MOS (DTMOS IV)

Applications  TK12A80W,S4X

• Switching Voltage Regulators

Features TK12A80W,S4X

(1) Low drain-source on-resistance: RDS(ON) = 0.38 Ω (typ.) by using Super Junction Structure : DTMOS

(2) Easy to control Gate switching

(3) Enhancement mode: Vth = 3.0 to 4.0 V(VDS = 10 V, I D = 0.57 mA)

Absolute Maximum Ratings (Note) (T  a = 25   unless otherwise specified)   TK12A80W,S4X

Characteristics  Drain-source voltage  Gate-source voltage  Drain current (DC)  Drain current (pulsed)  Power dissipation  Single-pulse avalanche energy  Single-pulse avalanche current  Reverse drain current (DC)  Reverse drain current (pulsed)  Channel temperature  Storage temperature  Isolation voltage (RMS)  Mounting torque  (T  c = 25    )  (t = 1.0 s)  (Note 1)  (Note 1)  (Note 2)  (Note 1)  (Note 1)  Symbol VDSS VGSS IDIDP PD EAS IAS IDR IDRP Tch Tstg VISO(RMS)  TOR  Rating  800 ±20  11.5  46  45  358  2.3  11.5  46  150  -55 to 150  2000  0.6  Unit VAW  mJAV  N    m

Dynamic Characteristics (T  a = 25   unless otherwise specified)  

Characteristics  Input capacitance  Reverse transfer capacitance  Output capacitance  Effective output capacitance  Gate resistance  Switching time (rise time)  Switching time (turn-on time)  Switching time (fall time)  Switching time (turn-off time)  MOSFET dv/dt ruggedness  Symbol Ciss Crss Coss Co(er) rgtr tontf toff  dv/dt  Test Condition  VDS = 300 V, VGS = 0 V, f = 1 MHz VDS = 0 to 640 V, VGS = 0 V VDS = OPEN , f = 1 MHz  See Figure 6.2.1 VDS ≤ V(BR)DSS, I  D  ≤ 11.5 A  Min   50  Typ.  1400 3  29  35  30  40  70  11  130   Max   Unit  pFΩ  ns  V/ns