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AFT05MS003NT1
High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Airfast Wideband RF Power LDMOS Transistor 1.8-941 MHz, 3 W, 7.5V
Designed for handheld two--way radio applications with frequencies from 1.8 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal for large--signal, common--source amplifier applications in handheld radio equipment.
Features AFT05MS003NT1
Characterized for Operation from 1.8 to 941 MHz
Unmatched Input and Output Allowing Wide Frequency Range Utilization
Integrated ESD Protection
Integrated Stability Enhancements
Wideband — Full Power Across the Band
Exceptional Thermal Performance
Extreme Ruggedness
Typical Applications AFT05MS003NT1
Output Stage VHF Band Handheld Radio
Output Stage UHF Band Handheld Radio
Output Stage for 700–900 MHz Handheld Radio
Smart Metering
Driver for 1.8–941 MHz Applications
型号: AFT05MS003NT1
制造商: NXP
产品种类: 射频金属氧化物半导体场效应(RF MOSFET)晶体管
RoHS: 无铅环保
晶体管极性: N-Channel
Id-连续漏极电流: 2.6 A
Vds-漏源极击穿电压: - 500 mV, 30 V
技术: Si
增益: 20.8 dB
输出功率: 3.2 W
最小工作温度: - 40 ℃
最大工作温度: + 150 ℃
安装风格: SMD/SMT
封装 / 箱体: SOT-89-3
封装: Cut Tape
封装: Reel
工作频率: 1.8 MHz to 941 MHz
类型: RF Power MOSFET
商标: NXP / Freescale
通道数量: 1 Channel
Pd-功率耗散: 30.5 W
产品类型: RF MOSFET Transistors
工厂包装数量: 1000
子类别: MOSFETs
Vgs - 栅极-源极电压: - 6 V, 12 V
Vgs th-栅源极阈值电压: 2.2 V
单位重量: 50.800 mg
AFT05MS003NT1
NXP(恩智浦)
SOT-89
无铅环保型
贴片式
盒带编带包装
2.6 A
3.2 W
20.8 dB
30.5 W