FQPF7N65C MOSFET ON安森美

FQPF7N65C

N-Channel QFET ® MOSFET 650 V, 7 A, 1.4 Ω

MOSFET 650V N-Channel Adv Q-FET C-Series

Description

This N-Channel enhancement mode power MOSFET is  produced using Fairchild Semiconductor®’s proprietary  planar stripe and DMOS technology. This advanced  MOSFET technology has been especially tailored to  reduce on-state resistance, and to provide superior  switching performance and high avalanche energy  strength. These devices are suitable for switched mode  power supplies, active power factor correction (PFC),  and electronic lamp ballasts.

FQPF7N65C Features

• 7 A, 650 V, RDS(on).= 1.4 Ω (Max.) @ VGS = 10 V, ID = 3.5 A

• Low Gate Charge (Typ. 28 nC)

• Low Crss (Typ. 12 pF)

• 100% Avalanche Tested

型号: FQPF7N65C

制造商: ON Semiconductor 

产品种类: MOSFET 

RoHS:  无铅环保  

技术: Si 

安装风格: Through Hole 

封装 / 箱体: TO-220FP-3 

通道数量: 1 Channel 

晶体管极性: N-Channel 

Vds-漏源极击穿电压: 650 V 

Id-连续漏极电流: 7 A 

Rds On-漏源导通电阻: 1.4 Ohms 

Vgs - 栅极-源极电压: 30 V 

最小工作温度: - 55 ℃ 

最大工作温度: + 150 ℃ 

配置: Single 

Pd-功率耗散: 52 W 

通道模式: Enhancement 

商标名: QFET 

封装: Tube 

高度: 16.07 mm  

长度: 10.36 mm  

系列: FQPF7N65C  

晶体管类型: 1 N-Channel  

类型: MOSFET  

宽度: 4.9 mm  

商标: ON Semiconductor / Fairchild  

正向跨导 - 最小值: 8 S  

CNHTS: 8541210000  

下降时间: 55 ns  

HTS Code: 8541290095  

MXHTS: 85412999  

产品类型: MOSFET  

上升时间: 50 ns  

工厂包装数量: 1000  

子类别: MOSFETs  

TARIC: 8541290000  

典型关闭延迟时间: 90 ns  

典型接通延迟时间: 20 ns  

零件号别名: FQPF7N65C_NL  

单位重量: 2.270 g