TK9A90E,S4X MOSFET Toshiba

TK9A90E,S4X

MOSFET PLN MOS 900V 1300m (VGS=10V) TO-220SIS Silicon N-Channel MOS (π-MOS)

Dynamic Characteristics (Ta = 25  unless otherwise specified)  TK9A90E,S4X

Characteristics  Input capacitance  Reverse transfer capacitance  Output capacitance  Gate resistance  Switching time (rise time)  Switching time (turn-on time)  Switching time (fall time)  Switching time (turn-off time)  MOSFET dv/dt ruggedness  Symbol  Ciss  Crss  Coss  rg  tr  ton  tf  toff  dv/dt  Test Condition  VDS = 25 V, VGS = 0 V, f = 1 MHz  VDS = OPEN, f = 1 MHz  See Fig. 6.2.1.  VDD = 0 to 400 V, ID = 9 A  Min                  20  Typ.  2000  15  150  3.5  40  80  35  140    Max                    Unit  pF  Ω  ns  V/ns

Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified)  TK9A90E,S4X

Characteristics  Drain-source voltage  Gate-source voltage  Drain current (DC)  Drain current (pulsed)  Power dissipation  Single-pulse avalanche energy  Avalanche current  Reverse drain current (DC)  Reverse drain current (pulsed)  Channel temperature  Storage temperature  Isolation voltage (RMS)  Mounting torque  (Tc = 25)  (Note 1)  (Note 1)  (Note 2)  (Note 1)  (Note 1)  Symbol  VDSS  VGSS  ID  IDP  PD  EAS  IAR  IDR  IDRP  Tch  Tstg  VISO(RMS)  TOR  Rating  900  ±30  9  27  50  454  9  9  27  150  -55 to 150  2000  0.6  Unit  V  A  W  mJ  A    V  Nm

Static Characteristics (Ta = 25  unless otherwise specified)  TK9A90E,S4X

Characteristics  Gate leakage current  Drain cut-off current  Drain-source breakdown voltage  Gate threshold voltage  Drain-source on-resistance  Symbol  IGSS  IDSS  V(BR)DSS  Vth  RDS(ON)  Test Condition  VGS = ±30 V, VDS = 0 V  VDS = 720 V, VGS = 0 V  ID = 10 mA, VGS = 0 V  VDS = 10 V, ID = 0.9 mA  VGS = 10 V, ID = 4.5 A  Min      900  2.5    Typ.          1.0  Max  ±1  10    4.0  1.3  Unit  μA  V  Ω