FCD360N65S3R0 MOSFET ON

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FCD360N65S3R0 

MOSFET SUPERFET3 650V 10A 360 mOhm ON Semiconductor 

Power MOSFET, N-Channel,  SUPERFET III, Easy Drive,  650 V, 10 A, 360 m 

 

FCD360N65S3R0 Description 

SUPERFETIII MOSFET is ON Semiconductor’s brand−new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. 

Consequently, SUPERFET III MOSFET Easy drive series helps  manage EMI issues and allows for easier design implementation. 

 

FCD360N65S3R0 Features 

• 700 V @ TJ= 150C 

• Typ. RDS(on)= 310 m 

• Ultra Low Gate Charge (Typ. Qg = 18 nC) 

• Low Effective Output Capacitance (Typ. Coss(eff.)= 173 pF) 

• 100% Avalanche Tested 

• These Devices are Pb−Free and are RoHS Compliant 

                                 

FCD360N65S3R0 Applications 

• Computing / Display Power Supplies 

• Telecom / Server Power Supplies 

• Industrial Power Supplies 

• Lighting / Charger / Adapter 

                      

型号/规格

FCD360N65S3R0

品牌/商标

ON(安森美)

封装形式

TO-252

环保类别

无铅环保型

安装方式

贴片式

包装方式

卷带编带包装

Vds-漏源极击穿电压

650 V

Rds On-漏源导通电阻

360 mOhms

Vgs - 栅极-源极电压

30 V

Qg-栅极电荷

18 nC