STF10NM60N MOSFET STM

STF10NM60N

N-channel 600 V, 0.53 Ω typ., 10 A MDmesh™ II Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages

MOSFET N-channel 600 V Mdmesh 8A

Description  

These devices are N-channel Power MOSFETs  developed using the second generation of  MDmesh™ technology. This revolutionary Power  MOSFET associates a vertical structure to the  company’s strip layout to yield one of the world’s  lowest on-resistance and gate charge. It is  therefore suitable for the most demanding high  efficiency converters.

Applications

• Switching applications

Features STF10NM60N

• 100% avalanche tested

• Low input capacitance and gate charge

• Low gate input resistance

型号: STF10NM60N

制造商: STMicroelectronics 

产品种类: MOSFET 

RoHS:  无铅环保  

技术: Si 

安装风格: Through Hole 

封装 / 箱体: TO-220-3 

通道数量: 1 Channel 

晶体管极性: N-Channel 

Vds-漏源极击穿电压: 650 V 

Id-连续漏极电流: 10 A 

Rds On-漏源导通电阻: 550 mOhms 

Vgs th-栅源极阈值电压: 4 V 

Vgs - 栅极-源极电压: 25 V 

Qg-栅极电荷: 19 nC 

最小工作温度: - 55 C 

最大工作温度: + 150 C 

Pd-功率耗散: 70 W 

配置: Single 

通道模式: Enhancement 

商标名: MDmesh 

封装: Tube 

系列: STF10NM60N  

晶体管类型: 1 N-Channel  

商标: STMicroelectronics  

下降时间: 15 ns  

产品类型: MOSFET  

上升时间: 12 ns  

工厂包装数量: 50  

子类别: MOSFETs  

典型关闭延迟时间: 32 ns  

典型接通延迟时间: 10 ns  

单位重量: 330 mg