TK20E60W,S1VX MOSFET Toshiba

TK20E60W,S1VX

MOSFET N-Ch DTMOSIV 600 V 165W 1680pF 20A

Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) TK20E60W,S1VX

Characteristics  Drain-source voltage  Gate-source voltage  Drain current (DC)  Drain current (pulsed)  Power dissipation  Single-pulse avalanche energy  Avalanche current  Reverse drain current (DC)  Reverse drain current (pulsed)  Channel temperature  Storage temperature  Mounting torque  (Tc = 25)  (Note 1)   (Note 1)  (Note 2)  (Note 1)   (Note 1)  Symbol  VDSS  VGSS  ID  IDP  PD  EAS  IAR  IDR  IDRP  Tch  Tstg  TOR  Rating  600  ±30  20  80  165  200  5  20  80  150  -55 to 150  0.6  Unit  V  A  W  mJ  A    Nm

Dynamic Characteristics (Ta = 25 unless otherwise specified) TK20E60W,S1VX

Characteristics  Input capacitance  Reverse transfer capacitance  Output capacitance  Effective output capacitance  Gate resistance  Switching time (rise time)  Switching time (turn-on time)  Switching time (fall time)  Switching time (turn-off time)  MOSFET dv/dt ruggedness  Symbol  Ciss  Crss  Coss  Co(er)  rg  tr  ton  tf  toff  dv/dt  Test Condition  VDS = 300 V, VGS = 0 V, f = 1 MHz  VDS = 0 to 400 V, VGS = 0 V  VDS = OPEN, f = 1 MHz  See Figure 6.2.1  VDD = 0 to 400 V, ID = 5 A  Min                    50  Typ.  1680  7  40  70  1.5  25  50  6  100    Max                      Unit  pF  Ω  ns  V/ns

Source-Drain Characteristics (Ta = 25 unless otherwise specified) TK20E60W,S1VX

Characteristics  Diode forward voltage  Reverse recovery time  Reverse recovery charge  Peak reverse recovery current  Diode dv/dt ruggedness  Symbol  VDSF  trr  Qrr  Irr  dv/dt  Test Condition  IDR = 20 A, VGS = 0 V  IDR = 10 A, VGS = 0 V  -dIDR/dt = 50 A/μs  IDR = 10 A, VGS = 0 V, VDD = 400 V  Min          15  Typ.    330  2.9  16    Max  -1.7          Unit  V  ns  μC  A  V/ns