TK2P60D(TE16L1,NQ) MOSFET

TK2P60D(TE16L1,NQ)

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)

MOSFET N-Ch MOS 2A 600V 60W 280pF 3.4 Ohm

Switching Regulator Applications TK2P60D(TE16L1,NQ)

• Low drain-source ON-resistance: RDS (ON) = 3.3 Ω (typ.)

• High forward transfer admittance: ⎪Yfs⎪ = 1.0 S (typ.)

• Low leakage current: IDSS = 10 μA (VDS = 600 V)

• Enhancement-mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)

Absolute Maximum Ratings (Ta = 25°C) TK2P60D(TE16L1,NQ)

Characteristics Symbol Rating Unit  Drain-source voltage VDSS 600 V  Gate-source voltage VGSS ±30 V  DC (Note 1) ID 2  Drain current Pulse (t = 1 ms)   (Note 1) IDP 8  A  Drain power dissipation (Tc = 25°C) PD 60 W  Single pulse avalanche energy   (Note 2) EAS 101 mJ  Avalanche current IAR 2 A  Repetitive avalanche energy (Note 3) EAR 6 mJ  Channel temperature Tch 150 °C  Storage temperature range Tstg -55 to 150 °C

型号: TK2P60D(TE16L1,NQ)

制造商: Toshiba 

产品种类: MOSFET 

RoHS:  无铅环保  

技术: Si 

安装风格: SMD/SMT 

封装 / 箱体: PW-Mold-3 

通道数量: 1 Channel 

晶体管极性: N-Channel 

Vds-漏源极击穿电压: 600 V 

Id-连续漏极电流: 2 A 

Rds On-漏源导通电阻: 4.3 Ohms 

Pd-功率耗散: 60 W 

配置: Single 

封装: Cut Tape 

封装: Reel 

高度: 2.3 mm  

长度: 6.5 mm  

系列: TK2P60D  

晶体管类型: 1 N-Channel  

宽度: 5.5 mm  

商标: Toshiba  

产品类型: MOSFET  

工厂包装数量: 2000  

子类别: MOSFETs  

单位重量: 4 g