图文详情
产品属性
相关推荐
TK2Q60D(Q)
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)
MOSFET N-Ch MOS 2A 600V 60W 280pF 4.3 Ohm
Switching Regulator Applications TK2Q60D(Q)
• Low drain-source ON-resistance: RDS (ON) = 3.2 Ω(typ.)
• High forward transfer admittance: |Yfs| = 1.0 S (typ.)
• Low leakage current: IDSS = 10 μA (max) (VDS = 600 V)
• Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C) TK2Q60D(Q)
Characteristics Symbol Rating Unit Drain-source voltage VDSS 600 V Gate-source voltage VGSS ±30 V DC (Note 1) ID 2 Drain current Pulse (Note 1) IDP 8 A Drain power dissipation (Tc = 25°C) PD 60 W Single pulse avalanche energy (Note 2) EAS 101 mJ Avalanche current IAR 2 A Repetitive avalanche energy (Note 3) EAR 6.0 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C
型号: TK2Q60D(Q)
制造商: Toshiba
产品种类: MOSFET
RoHS: 无铅环保
技术: Si
安装风格: Through Hole
封装 / 箱体: PW-Mold2-3
通道数量: 1 Channel
晶体管极性: N-Channel
Vds-漏源极击穿电压: 600 V
Id-连续漏极电流: 2 A
Rds On-漏源导通电阻: 4.3 Ohms
Vgs th-栅源极阈值电压: 2.4 V
Vgs - 栅极-源极电压: 30 V
Qg-栅极电荷: 7 nC
最小工作温度: - 55 C
最大工作温度: + 150 C
Pd-功率耗散: 60 W
配置: Single
通道模式: Enhancement
封装: Cut Tape
封装: Reel
高度: 7 mm
长度: 6.5 mm
系列: TK2Q60D
晶体管类型: 1 N-Channel
宽度: 2.3 mm
商标: Toshiba
下降时间: 7 ns
产品类型: MOSFET
上升时间: 15 ns
工厂包装数量: 200
子类别: MOSFETs
典型关闭延迟时间: 55 ns
典型接通延迟时间: 35 ns
单位重量: 4 g
TK2Q60D(Q)
TOSHIBA(东芝)
PW-Mold2-3
无铅环保型
直插式
单件包装
: 2 A
: 4.3 Ohms
: - 55 ℃
: + 150 ℃