TK2P90E,RQS MOSFET Toshiba

TK2P90E,RQS

MOSFET N-Ch TT-MOSVIII 900V 80W 500pF 2A Silicon N-Channel MOS (π-MOS VIII)

Static Characteristics (Ta = 25  unless otherwise specified)  TK2P90E,RQS

Characteristics  Gate leakage current  Drain cut-off current  Drain-source breakdown voltage  Gate threshold voltage  Drain-source on-resistance  Symbol  IGSS  IDSS  V(BR)DSS  Vth  RDS(ON)  Test Condition  VGS = ±30 V, VDS = 0 V  VDS = 720 V, VGS = 0 V  ID = 10 mA, VGS = 0 V  VDS = 10 V, ID = 0.2 mA  VGS = 10 V, ID = 1.0 A  Min      900  2.5    Typ.          4.7  Max  ±1  10    4.0  5.9  Unit  μA  V  Ω

Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) TK2P90E,RQS

Characteristics  Drain-source voltage  Gate-source voltage  Drain current (DC)  Drain current (pulsed)  Power dissipation  Single-pulse avalanche energy  Avalanche current  Reverse drain current (DC)  Reverse drain current (pulsed)  Channel temperature  Storage temperature  (Tc = 25)  (Note 1)  (Note 1)  (Note 2)  (Note 1)  (Note 1)  Symbol  VDSS  VGSS  ID  IDP  PD  EAS  IAR  IDR  IDRP  Tch  Tstg  Rating  900  ±30  2  6  80  157  2  2  6  150  -55 to 150  Unit  V  A  W  mJ  A  

Applications TK2P90E,RQS

• Switching Voltage Regulators

Features

(1) Low drain-source on-resistance: RDS(ON) = 4.7 Ω (typ.)

(2) Low leakage current : IDSS = 10 μA (max) (VDS = 720 V)

(3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.2 mA)