STD2HNK60Z-1 MOSFET N-Ch

STD2HNK60Z-1

N-channel 600 V, 3.5 Ω typ., 2 A SuperMESH™ Power MOSFETs in  DPAK, IPAK, TO-220FP and TO-92 packages

MOSFET N-Ch, 600V-4.4ohms Zener SuperMESH 2A

Applications

• Switching applications

Description

These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications.

Features STD2HNK60Z-1

• Extremely high dv/dt capability

• 100% avalanche tested

• Gate charge minimized

• Zener-protected

型号: STD2HNK60Z-1

制造商: STMicroelectronics 

产品种类: MOSFET 

RoHS:  无铅环保  

技术: Si 

安装风格: Through Hole 

封装 / 箱体: TO-251-3 

通道数量: 1 Channel 

晶体管极性: N-Channel 

Vds-漏源极击穿电压: 600 V 

Id-连续漏极电流: 2 A 

Rds On-漏源导通电阻: 4.8 Ohms 

Vgs th-栅源极阈值电压: 3.75 V 

Vgs - 栅极-源极电压: 30 V 

Qg-栅极电荷: 11 nC 

最小工作温度: - 55 C 

最大工作温度: + 150 C 

Pd-功率耗散: 45 W 

配置: Single 

通道模式: Enhancement 

商标名: SuperMESH 

封装: Tube 

高度: 6.2 mm  

长度: 6.6 mm  

系列: STD2HNK60Z-1  

晶体管类型: 1 N-Channel  

宽度: 2.4 mm  

商标: STMicroelectronics  

正向跨导 - 最小值: 1.5 S  

下降时间: 50 ns  

产品类型: MOSFET  

上升时间: 30 ns  

工厂包装数量: 75  

子类别: MOSFETs  

典型关闭延迟时间: 13 ns  

典型接通延迟时间: 10 ns  

单位重量: 4 g