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TK58E06N1,S1X
MOSFET 60V N-Ch PWR FET 105A 110W 46nC Silicon N-channel MOS (U-MOS-H)
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) TK58E06N1,S1X
TK58E06N1,S1X Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Channel temperature Storage temperature (Silicon limit) (t = 1 ms) (Tc = 25) (Note 1), (Note 2) (Note 1), (Note 3) (Note 1) (Note 4) Symbol VDSS VGSS ID ID IDP PD EAS IAR Tch Tstg Rating 60 ±20 105 58 268 110 158 58 150 -55 to 150 Unit V A W mJ A
型号: TK58E06N1,S1X
制造商: Toshiba
产品种类: MOSFET
RoHS: 无铅环保
技术: Si
安装风格: Through Hole
封装 / 箱体: TO-220-3
通道数量: 1 Channel
晶体管极性: N-Channel
Vds-漏源极击穿电压: 60 V
Id-连续漏极电流: 105 A
Rds On-漏源导通电阻: 5.4 mOhms
Vgs - 栅极-源极电压: 10 V
Qg-栅极电荷: 46 nC
Pd-功率耗散: 110 W
配置: Single
高度: 15.1 mm
长度: 10.16 mm
系列: TK58E06N1
晶体管类型: 1 N-Channel
宽度: 4.45 mm
商标: Toshiba
产品类型: MOSFET
工厂包装数量: 50
子类别: MOSFETs
单位重量: 6 g
TK58E06N1,S1X
TOSHIBA(东芝)
TO-220
无铅环保型
直插式
Through Hole
: 110 W
: 46 nC
: 105 A
: 60 V