TK5A65D(STA4,Q,M) MOSFET Toshiba

TK5A65D(STA4,Q,M)

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS VII)

MOSFET N-Ch FET 650V 2.6s IDSS 10 uA 1.2 Ohm

Thermal Characteristics  TK5A65D(STA4,Q,M)

Characteristics Symbol Max Unit  Thermal resistance, channel to case Rth (ch-c) 3.125 °C/W  Thermal resistance, channel to ambient Rth (ch-a) 62.5 °C/W

Switching Regulator Applications TK5A65D(STA4,Q,M)

• Low drain-source ON resistance: RDS (ON) = 1.2 Ω (typ.)

• High forward transfer admittance: ⎪Yfs⎪ = 2.6 S (typ.)

• Low leakage current: IDSS = 10 μA (max) (VDS = 650 V)

• Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

Absolute Maximum Ratings (Ta = 25°C) TK5A65D(STA4,Q,M)

Characteristics Symbol Rating Unit  Drain-source voltage VDSS 650 V  Gate-source voltage VGSS ±30 V  DC (Note 1) ID 5  Drain current  Pulse (Note 1) IDP 20  A  Drain power dissipation (Tc = 25°C) PD 40 W  Single pulse avalanche energy   (Note 2) EAS 180 mJ  Avalanche current IAR 5 A  Repetitive avalanche energy (Note 3) EAR 4.0 mJ  Channel temperature Tch 150 °C  Storage temperature range Tstg −55 to 150 °C

Source-Drain Ratings and Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Continuous drain reverse current

 (Note 1) IDR ⎯ ⎯ ⎯ 5 A

Pulse drain reverse current (Note 1) IDRP ⎯ ⎯ ⎯ 20 A

Forward voltage (diode) VDSF IDR = 5 A, VGS = 0 V ⎯ ⎯ −1.7 V

Reverse recovery time trr ⎯ 1200 ⎯ ns

Reverse recovery charge Qrr

IDR = 5 A, VGS = 0 V,

dIDR/dt = 100 A/μs ⎯ 10 ⎯ μC