TK34E10N1,S1X MOSFET Toshiba

TK34E10N1,S1X

MOSFET N-Ch PWR FET 75A 103W 100V VDSS Silicon N-channel MOS (U-MOS-H)

型号: TK34E10N1,S1X

制造商: Toshiba 

产品种类: MOSFET 

RoHS:  无铅环保  

技术: Si 

安装风格: Through Hole 

封装 / 箱体: TO-220-3 

通道数量: 1 Channel 

晶体管极性: N-Channel 

Vds-漏源极击穿电压: 100 V 

Id-连续漏极电流: 75 A 

Rds On-漏源导通电阻: 9.5 mOhms 

Vgs - 栅极-源极电压: 10 V 

Pd-功率耗散: 103 W 

配置: Single 

高度: 15.1 mm  

长度: 10.16 mm  

系列: TK34E10N1  

晶体管类型: 1 N-Channel  

宽度: 4.45 mm  

商标: Toshiba  

产品类型: MOSFET  

工厂包装数量: 50  

子类别: MOSFETs  

单位重量: 6 g

Static Characteristics (Ta = 25 unless otherwise specified) TK34E10N1,S1X

Characteristics  Gate leakage current  Drain cut-off current  Drain-source breakdown voltage  Drain-source breakdown voltage  Gate threshold voltage  Drain-source on-resistance  (Note 4)  Symbol  IGSS  IDSS  V(BR)DSS  V(BR)DSX  Vth  RDS(ON)  Test Condition  VGS = ±20 V, VDS = 0 V  VDS = 100 V, VGS = 0 V  ID = 10 mA, VGS = 0 V  ID = 10 mA, VGS = -20 V  VDS = 10 V, ID = 0.5 mA  VGS = 10 V, ID = 17 A  Min      100  65  2.0    Typ.            7.9  Max  ±0.1  10      4.0  9.5  Unit  μA  V  mΩ

Source-Drain Characteristics (Ta = 25 unless otherwise specified)  TK34E10N1,S1X

Characteristics  Reverse drain current (DC)  Reverse drain current (pulsed)  Diode forward voltage  Reverse recovery time  Reverse recovery charge  (Note 5)   (Note 5)  (Note 6)   (Note 6)  Symbol  IDR  IDRP  VDSF  trr  Qrr  Test Condition      IDR = 34 A, VGS = 0 V  IDR = 34 A, VGS = 0 V  -dIDR/dt = 100 A/μs  Min            Typ.        61  110  Max  34  147  -1.2      Unit  A  V  ns  nC