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Features
• NPN silicon microwave power transistors
• Common base configuration
• Broadband Class C operation
• High efficiency inter-digitized geometry
• Diffused emitter ballasting resistors
• Gold metallization system
• Internal input and output impedance matching
• Hermetic metal/ceramic package
• RoHS Compliant
Avionics Pulsed Power Transistor
350W, 960-1215 MHz, 10μs Pulse, 10% Duty
MAPRST0912-350
MA/COM
金属/陶瓷
无铅环保型
贴片式
盘装
超大功率