NTMFS4C022NT1G MOSFET ON

NTMFS4C022NT1G

Power MOSFET  30 V, 2.1 m, 136 A, Single N−Channel,  SO−8FL

Features NTMFS4C022NT1G

• Small Footprint (5x6 mm) for Compact Design

• Low RDS(on) to Minimize Conduction Losses

• Low QG and Capacitance to Minimize Driver Losses

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

NTMFS4C022NT1G THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)

Parameter Symbol Value Unit

Junction−to−Case − Steady State (Note 2) RJC 1.95 °C/W

Junction−to−Ambient − Steady State (Note 2) RJA 40

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.

3. Maximum current for pulses as long as 1 second is higher but is dependent

on pulse duration and duty cycle.

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) NTMFS4C022NT1G

Parameter Symbol Value Unit  Drain−to−Source Voltage VDSS 30 V  Gate−to−Source Voltage VGS 20 V  Continuous Drain Current  RJC (Notes 1, 3) Steady  State  TC = 25°C ID 136 A  Power Dissipation RJC  (Notes 1, 3)  TC = 25°C PD 64 W  Continuous Drain Current  RJA (Notes 1, 2, 3) Steady  State  TA = 25°C ID 30 A  Power Dissipation RJA  (Notes 1, 2, 3)  TA = 25°C PD 3.1 W  Pulsed Drain Current TA = 25°C, tp = 10 s IDM 352 A  Operating Junction and Storage Temperature TJ, Tstg −55 to  150  °C  Source Current (Body Diode) IS 53 A  Single Pulse Drain−to−Source Avalanche  Energy (IL(pk) = 11 A)  EAS 549 mJ  Lead Temperature for Soldering Purposes  (1/8″ from case for 10 s)  TL 260 °C  Stre