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STP60NF10
N-channel 100V - 0.019Ω - 80A - TO-220 - D2PAK - I2PAK STripFET™ II Power MOSFET
MOSFET N-Ch 100 Volt 80 Amp
General features
■ Exceptional dv/dt capability
■ 100% avalanche tested
Description STP60NF10
This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements.
Applications
■ Switching application
型号: STP60NF10
制造商: STMicroelectronics
产品种类: MOSFET
RoHS: 无铅环保
技术: Si
安装风格: Through Hole
封装 / 箱体: TO-220-3
通道数量: 1 Channel
晶体管极性: N-Channel
Vds-漏源极击穿电压: 100 V
Id-连续漏极电流: 80 A
Rds On-漏源导通电阻: 23 mOhms
Vgs - 栅极-源极电压: 20 V
最小工作温度: - 55 C
最大工作温度: + 175 C
Pd-功率耗散: 300 W
配置: Single
通道模式: Enhancement
商标名: STripFET
封装: Tube
高度: 9.15 mm
长度: 10.4 mm
系列: STP60NF10
晶体管类型: 1 N-Channel
类型: MOSFET
宽度: 4.6 mm
商标: STMicroelectronics
正向跨导 - 最小值: 78 S
下降时间: 23 ns
产品类型: MOSFET
上升时间: 56 ns
工厂包装数量: 50
子类别: MOSFETs
典型关闭延迟时间: 82 ns
典型接通延迟时间: 17 ns
单位重量: 1.438 g
STP60NF10
ST(意法半导体)
TO-220
无铅环保型
直插式
Tube
: 80 A
: 300 W
: 100 V
: 23 mOhms