TK31J60W,S1VQ MOSFET Toshiba

TK31J60W,S1VQ

MOSFET N-Ch 30.8A 230W FET 600V 3000pF 86nC Silicon N-Channel MOS (DTMOS IV)

Applications  TK31J60W,S1VQ

• Switching Voltage Regulators  

Features  TK31J60W,S1VQ

(1) Low drain-source on-resistance: RDS(ON) = 0.073 Ω (typ.)  by used to Super Junction Structure : DTMOS

(2) Easy to control Gate switching  

(3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 1.5 mA)

Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)  TK31J60W,S1VQ

Characteristics  Drain-source voltage  Gate-source voltage  Drain current (DC)  Drain current (pulsed)  Power dissipation  Single-pulse avalanche energy  Avalanche current  Reverse drain current (DC)  Reverse drain current (pulsed)  Channel temperature  Storage temperature  Mounting torque  (Tc = 25)  (Note 1)   (Note 1)  (Note 2)  (Note 1)   (Note 1)  Symbol  VDSS  VGSS  ID  IDP  PD  EAS  IAR  IDR  IDRP  Tch  Tstg  TOR  Rating  600  ±30  30.8  123  230  437  7.7  30.8  123  150  -55 to 150  0.8  Unit  V  A  W  mJ  A    Nm

Static Characteristics (Ta = 25 unless otherwise specified)  

Characteristics  Gate leakage current  Drain cut-off current  Drain-source breakdown voltage  Gate threshold voltage  Drain-source on-resistance  Symbol  IGSS  IDSS  V(BR)DSS  Vth  RDS(ON)  Test Condition  VGS = ±30 V, VDS = 0 V  VDS = 600 V, VGS = 0 V  ID = 10 mA, VGS = 0 V  VDS = 10 V, ID = 1.5 mA  VGS = 10 V, ID = 15.4 A  Min      600  2.7    Typ.          0.073  Max  ±1  10    3.7  0.088  Unit  μA  V  Ω