IRFB3306GPBF MOSFET ▊进口原装现货▊

Symbol

Parameter

Max.

Units

I_D @ T_C = 25°C

Continuous Drain Current, V_GS @ 10V (Silicon Limited)

160G)

A

I_D @ T_C = 100°C

Continuous Drain Current, V_GS @ 10V (Silicon Limited)

110G)

I_D @ T_C = 25°C

Continuous Drain Current, V_GS @ 10V (Wire Bond Limited)

120

IDM

Pulsed Drain Current Q)

620

P_D @T_C = 25°C

Maximum Power Dissipation

230

W

Linear Derating Factor

1.5

W/°C

VGS

Gate-to-Source Voltage

± 20

V

dv/dt

Peak Diode Recovery ®

14

V/ns

T_J

TSTG

Operating Junction and

Storage Temperature Range

-55  to + 175

°C

Soldering Temperature, for 10 seconds

(1.6mm from case)

300

Mounting torque, 6-32 or M3 screw

10lbf•in (1.1N•m)

Symbol

Parameter

Typ.

Max.

Units

RqJC

Junction-to-Case ®

–––

0.65

°C/W

RqCS

Case-to-Sink, Flat Greased Surface , TO-220

0.50

–––

RqJA

Junction-to-Ambient, TO-220

–––

62