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BUL49D
双极晶体管 - 双极结型晶体管(BJT) NPN Hi-Volt Fast Sw
High voltage fast-switching NPN power transistors
Description BUL49D
The devices are manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. The devices are designed for use in electronic transformer for halogen lamps.
Features
■ High voltage capability
■ Low spread of dynamic parameters
■ Minimum lot-to-lot spread for reliable operation
■ Very high switching speed
■ High ruggedness
Applications
■ Electronic transformers for halogen lamps
■ Flyback and forward single transistor low power converters
型号: BUL49D
制造商: STMicroelectronics
产品种类: 双极晶体管 - 双极结型晶体管(BJT)
RoHS: 无铅环保
安装风格: Through Hole
封装 / 箱体: TO-220-3
晶体管极性: NPN
配置: Single
集电极—发射极最大电压 VCEO: 450 V
集电极—基极电压 VCBO: 850 V
发射极 - 基极电压 VEBO: 10 V
集电极—射极饱和电压: 1.2 V
最大直流电集电极电流: 5 A
最小工作温度: - 65 C
最大工作温度: + 150 C
系列: BUL49D
高度: 9.15 mm (Max)
长度: 10.4 mm (Max)
封装: Tube
宽度: 4.6 mm (Max)
商标: STMicroelectronics
集电极连续电流: 5 A
Pd-功率耗散: 80 W
产品类型: BJTs - Bipolar Transistors
工厂包装数量: 50
子类别: Transistors
单位重量: 6 g
BUL49D
ST(意法半导体)
TO-220
无铅环保型
直插式
Through Hole
NPN型
: 850 V
: 10 V
: - 65 C
: + 150 C