DTA114EKAT146 双极晶体管

DTA114EKAT146

PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors)

双极晶体管 - 预偏置 DIGITL PNP 50V 50MA

Features DTA114EKAT146

1) Built-In Biasing Resistors, R1 = R2 = 10kΩ

2) Built-in bias resistors enable the configuration of

an inverter circuit without connecting external

input resistors (see inner circuit) .

3) Only the on/off conditions need to be set

for operation, making the circuit design easy.

4) Complementary NPN Types: DTC114E series

Application DTA114EKAT146

INVERTER, INTERFACE, DRIVER

Electrical characteristics (Ta = 25°C)

Parameter Symbol Conditions Values Unit

Min. Typ. Max. Input voltage

VI(off) VCC = -5V, IO = -100μA - - -0.5 V

VI(on) VO = -0.3V, IO = -10mA -3.0 - -

Output voltage VO(on) IO / II = -10mA / -0.5mA - -100 -300 mV

Input current II VI = -5V - - -880 μA

Output current IO(off) VCC = -50V, VI = 0V - - -500 nA

DC current gain GI VO = -5V, IO = -5mA 30 - - -

Input resistance R1 - 7 10 13 kΩ

Resistance ratio R2 /R1 - 0.8 1.0 1.2 - 

Transition frequency fT *1 VCE = -10V, IE = 5mA, f = 100MHz - 250 - MHz

Absolute maximum ratings (Ta = 25°C) DTA114EKAT146

Parameter Symbol Values Unit

Supply voltage VCC -50 V

Input voltage VIN -40 to 10 V

Output current IO -50 mA

Collector current IC(MAX) *1 -100 mA

Power dissipation

DTA114EM PD *2 150 mW

DTA114EEB 150

DTA114EE 150

DTA114EUB 200

DTA114EUA 200

DTA114EKA 200

Junction temperature Tj 150 ℃

Range of storage temperature Tstg -55 to +150 ℃