MMUN2214LT1G 双极晶体管 ON

MMUN2214LT1G

Digital Transistors (BRT)  R1 = 10 k, R2 = 47 k  NPN Transistors with Monolithic Bias  Resistor Network

双极晶体管 - 预偏置 100mA 50V BRT NPN

MMUN2214LT1G This series of digital transistors is designed to replace a single  device and its external resistor bias network. The Bias Resistor  Transistor (BRT) contains a single transistor with a monolithic bias  network consisting of two resistors; a series base resistor and a  base−emitter resistor. The BRT eliminates these individual  components by integrating them into a single device. The use of a BRT  can reduce both system cost and board space.

MMUN2214LT1G Features

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

• S and NSV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC-Q101 Qualified

and PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

型号: MMUN2214LT1G

制造商: ON Semiconductor 

产品种类: 双极晶体管 - 预偏置 

RoHS:  无铅环保  

配置: Single 

晶体管极性: NPN 

典型输入电阻器: 10 kOhms 

典型电阻器比率: 0.21 

安装风格: SMD/SMT 

封装 / 箱体: SOT-23-3 

直流集电极/Base Gain hfe Min: 80 

集电极—发射极最大电压 VCEO: 50 V 

集电极连续电流: 0.1 A 

峰值直流集电极电流: 100 mA 

Pd-功率耗散: 246 mW 

最小工作温度: - 55 ℃ 

最大工作温度: + 150 ℃ 

系列: MMUN2214L 

封装: Cut Tape 

包装: Reel 

直流电流增益 hFE 最大值: 80  

高度: 0.94 mm  

长度: 2.9 mm  

宽度: 1.3 mm  

商标: ON Semiconductor  

CNHTS: 8541210000  

HTS Code: 8541210095  

MXHTS: 85412101  

产品类型: BJTs - Bipolar Transistors - Pre-Biased  

资格: AEC-Q101  

工厂包装数量: 3000  

子类别: Transistors  

TARIC: 8541210000  

单位重量: 8 mg