BFU668F,115 双极晶体管 NXP

BFU668F,115

双极晶体管 - 双极结型晶体管(BJT) NPN wideband silicon RF transistor

NPN wideband silicon RF transistor

Product profile  BFU668F,115

1.1 General description

NPN silicon microwave transistor in a plastic, 4-pin dual-emitter SOT343F package offering an innovative Ku-band DRO solution.

1.2 Features and benefits

 DROs with good output power and low phase noise at very low current consumption: 5 dBm and 55 dBc/Hz/1 kHz at 12 mA

 Low-noise, high gain for low cost LNA solutions

 40 GHz fT silicon technology

1.3 Applications BFU668F,115

 Ku-band DROs in Ku-band LNBs

 C-band, low current LNAs

型号: BFU668F,115

制造商: NXP 

产品种类: 双极晶体管 - 双极结型晶体管(BJT) 

RoHS:  无铅环保  

技术: Si 

安装风格: SMD/SMT 

封装 / 箱体: SOT-343F-4 

晶体管极性: NPN 

配置: Dual 

集电极—发射极最大电压 VCEO: 5.5 V 

集电极—基极电压 VCBO: 16 V 

发射极 - 基极电压 VEBO: 2.5 V 

增益带宽产品fT: 20 GHz 

最大工作温度: + 150 ℃ 

直流电流增益 hFE 最大值: 200  

封装: Cut Tape  

封装: Reel  

商标: NXP Semiconductors  

集电极连续电流: 40 mA  

CNHTS: 8541290000  

直流集电极/Base Gain hfe Min: 90  

HTS Code: 8541290095  

MXHTS: 85412999  

Pd-功率耗散: 200 mW  

产品类型: BJTs - Bipolar Transistors  

工厂包装数量: 3000  

子类别: Transistors  

TARIC: 8541290000  

单位重量: 7 mg