2SC5200N(S1,E,S) 双极晶体管

2SC5200N(S1,E,S)

双极晶体管 - 双极结型晶体管(BJT) POWER TRANSISTOR PC=150W; F=30MHZ

TOSHIBA Transistor Silicon NPN Triple Diffused Type

Power Amplifier Applications 2SC5200N

• High breakdown voltage: VCEO = 230 V (min)

• Complementary to 2SA1943

• Suitable for use in 100-W high fidelity audio amplifier’s output stage

型号: 2SC5200N

产品种类: 双极晶体管 - 双极结型晶体管(BJT) 

RoHS:  无铅环保  

安装风格: Through Hole 

封装 / 箱体: TO-3P-3 

晶体管极性: NPN 

配置: Single 

集电极—发射极最大电压 VCEO: 230 V 

集电极—基极电压 VCBO: 230 V 

发射极 - 基极电压 VEBO: 5 V 

集电极—射极饱和电压: 0.4 V 

最大直流电集电极电流: 15 A 

增益带宽产品fT: 30 MHz 

最小工作温度: - 55 C 

最大工作温度: + 150 C 

系列: 2SC5200 

直流电流增益 hFE 最大值: 160  

商标: Toshiba  

集电极连续电流: 15 A  

直流集电极/Base Gain hfe Min: 35  

Pd-功率耗散: 150 W  

产品类型: BJTs - Bipolar Transistors  

工厂包装数量: 25  

子类别: Transistors  

单位重量: 7 g

Electrical Characteristics (Ta = 25°C) 2SC5200N

Characteristics Symbol Test Condition Min Typ. Max Unit  Collector cut-off current ICBO VCB = 230 V, IE = 0 A ― ― 5.0 μA  Emitter cut-off current IEBO VEB = 5 V, IC = 0 A ― ― 5.0 μA  Collector-emitter breakdown voltage V (BR) CEO IC = 50 mA, IB = 0 A 230 ― ― V  DC current gain  hFE (1)  (Note)  VCE = 5 V, IC = 1 A 55 ― 160  hFE (2) VCE = 5 V, IC = 7 A 35 60 ―  Collector-emitter saturation voltage VCE (sat) IC = 8 A, IB = 0.8 A ― 0.4 3.0 V  Base-emitter voltage VBE VCE = 5 V, IC = 7 A ― 1.0 1.5 V  Transition frequency fT VCE = 5 V, IC = 1 A ― 30 ― MHz  Collector output capacitance Cob VCB = 10 V, IE = 0 A, f = 1 MHz ― 200 ― pF