TTA1943(Q) 双极晶体管

TTA1943(Q)

双极晶体管 - 双极结型晶体管(BJT) PNP 150W -15A 80 HFE -3V -230V

Absolute Maximum Ratings (Ta = 25°C)  TTA1943

Characteristics Symbol Rating Unit  Collector-base voltage VCBO -230 V  Collector-emitter voltage VCEO -230 V  Emitter-base voltage VEBO -5 V  Collector current IC -15 A  Base current IB -1.5 A  Collector power dissipation (Tc=25°C) PC 150 W  Junction temperature Tj 150 °C  Storage temperature range Tstg −55 to 150 °C

Electrical Characteristics (Ta = 25°C)  

Characteristics Symbol Test Condition Min Typ. Max Unit  Collector cut-off curren ICBO VCB = -230 V, IE = 0 ― ― -5.0 μA  Emitter cut-off current IEBO VEB = -5 V, IC = 0 ― ― -5.0 μA  Collector-emitter breakdown voltage V (BR) CEO IC = -50 mA, IB = 0 -230 ― ― V  hFE (1) VCE = -5 V, IC = -1 A 80 ― 160  DC current gain  hFE (2) VCE = -5 V, IC = -7 A 35 ― ―  Collector-emitter saturation voltage VCE (sat) IC = -8 A, IB = -0.8 A ― ― -3.0 V  Base-emitter voltage VBE VCE = -5 V, IC = -7 A ― ― -1.5 V  Transition frequency fT VCE = -5 V, IC = -1 A ― 30 ― MHz  Collector output capacitance Cob VCB = -10 V, IE = 0, f = 1 MHz ― 240 ― pF

型号: TTA1943(Q)

制造商: Toshiba 

产品种类: 双极晶体管 - 双极结型晶体管(BJT) 

RoHS:  无铅环保  

技术: Si 

安装风格: Through Hole 

封装 / 箱体: 2-21F1A-3 

晶体管极性: PNP 

配置: Single 

集电极—发射极最大电压 VCEO: - 230 V 

集电极—基极电压 VCBO: - 230 V 

发射极 - 基极电压 VEBO: - 5 V 

集电极—射极饱和电压: - 3 V 

最大直流电集电极电流: - 15 A 

增益带宽产品fT: 30 MHz 

最小工作温度: - 55 C 

最大工作温度: + 150 C 

系列: TTA1943 

直流电流增益 hFE 最大值: 160  

封装: Bulk  

商标: Toshiba  

集电极连续电流: - 15 A  

直流集电极/Base Gain hfe Min: 80  

Pd-功率耗散: 150 W  

产品类型: BJTs - Bipolar Transistors  

工厂包装数量: 100  

子类别: Transistors  

单位重量: 5.500 g