BC848BWT1G 双极晶体管 ON

BC848BWT1G

双极晶体管 - 双极结型晶体管(BJT) 100mA 30V NPN

General Purpose  Transistors  NPN Silicon

These BC848BWT1G transistors are designed for general purpose amplifier applications. They are housed in the SC−70/SOT−323 which is designed for low power surface mount applications.

BC848BWT1G Features

• S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

型号: BC848BWT1G

制造商: ON Semiconductor 

产品种类: 双极晶体管 - 双极结型晶体管(BJT) 

RoHS:  无铅环保  

安装风格: SMD/SMT 

封装 / 箱体: SC-70-3 

晶体管极性: NPN 

配置: Single 

集电极—发射极最大电压 VCEO: 30 V 

集电极—基极电压 VCBO: 30 V 

发射极 - 基极电压 VEBO: 5 V 

集电极—射极饱和电压: 0.6 V 

最大直流电集电极电流: 0.1 A 

增益带宽产品fT: 100 MHz 

最小工作温度: - 55 ℃ 

最大工作温度: + 150 ℃ 

系列: BC848BW 

高度: 0.85 mm  

长度: 2.1 mm  

封装: Cut Tape  

封装: Reel  

宽度: 1.24 mm  

商标: ON Semiconductor  

集电极连续电流: 0.1 A  

CNHTS: 8541210000  

直流集电极/Base Gain hfe Min: 150  

HTS Code: 8541210095  

MXHTS: 85412101  

Pd-功率耗散: 150 mW  

产品类型: BJTs - Bipolar Transistors  

资格: AEC-Q101  

工厂包装数量: 3000  

子类别: Transistors  

TARIC: 8541210000  

单位重量: 6.200 mg