BUL58D 双极结型晶体管

BUL58D

HIGH VOLTAGE FAST-SWITCHING   NPN POWER TRANSISTOR

双极晶体管 - 双极结型晶体管(BJT) Hi Vltg Fast Swtchng NPN Pwr Transistor

DESCRIPTION

The BUL58D is manufactured using high voltage

Multi Epitaxial Planar technology to enhance

switching speeds while maintaining a wide

RBSOA.

The BUL series is designed for use in lighting

applications and low cost switch-mode power

supplies.

■ STMicroelectronics PREFERRED

SALESTYPE

■ NPN TRANSISTOR

■ HIGH VOLTAGE CAPABILITY

■ LOW SPREAD OF DYNAMIC PARAMETERS

■ MINIMUM LOT-TO-LOT SPREAD FOR

RELIABLE OPERATION

■ LOW BASE-DRIVE REQUIREMENTS

■ VERY HIGH SWITCHING SPEED

■ FULLY CHARACTERISED AT 125oC

■ HIGH RUGGEDNESS

■ INTEGRATED ANTIPARALLEL

COLLECTOR-EMITTER DIODE

APPLICATIONS BUL58D

■ ELECTRONIC TRANSFORMERS FOR

HALOGEN LAMPS

■ ELECTRONIC BALLASTS FOR

FLUORESCENT LIGHTING

■ SWITCH MODE POWER SUPPLIES 

制造商: STMicroelectronics 

产品种类: 双极晶体管 - 双极结型晶体管(BJT) 

RoHS:  无铅环保  

安装风格: Through Hole 

封装 / 箱体: TO-220-3 

晶体管极性: NPN 

集电极—发射极最大电压 VCEO: 450 V 

发射极 - 基极电压 VEBO: 9 V 

最大直流电集电极电流: 8 A 

最大工作温度: + 150 C 

系列: BUL58D 

封装: Tube  

商标: STMicroelectronics  

直流集电极/Base Gain hfe Min: 5  

Pd-功率耗散: 85000 mW  

产品类型: BJTs - Bipolar Transistors  

工厂包装数量: 50  

子类别: Transistors  

单位重量: 2.300 g