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MD1802FX
High voltage NPN power transistor for standard definition CRT display
双极晶体管 - 双极结型晶体管(BJT) NPN Power Transistor
Features MD1802FX
■ State-of-the-art technology:
– Diffused collector “Enhanced generation”
■ Stable performances versus operating temperature variation
■ Low base-drive requirements
■ Tight hFE range at operating collector current
■ Fully insulated power package U.L. compliant
Applications MD1802FX
■ Horizontal deflection output for TV
■ Switch mode power supplies for CRT TV
Description
The MD1802FX is manufactured using Diffused Collector in Planar Technology adopting new and enhanced high voltage structure. The new MD product series show improved silicon efficiency bringing updated performance to the Horizontal Deflection stage.
制造商: STMicroelectronics
产品种类: 双极晶体管 - 双极结型晶体管(BJT)
RoHS: 无铅环保
安装风格: Through Hole
封装 / 箱体: ISOWATT-218FX-3
晶体管极性: NPN
配置: Single
集电极—发射极最大电压 VCEO: 700 V
集电极—基极电压 VCBO: 9 V
发射极 - 基极电压 VEBO: 9 V
最大直流电集电极电流: 10 A
最小工作温度: - 65 C
最大工作温度: + 150 C
系列: MD1802FX
直流电流增益 hFE 最大值: 8.5
高度: 14.7 mm
长度: 26.7 mm
宽度: 15.7 mm
商标: STMicroelectronics
集电极连续电流: 10 A
直流集电极/Base Gain hfe Min: 5.5 at 5 A, 5 V
Pd-功率耗散: 57000 mW
产品类型: BJTs - Bipolar Transistors
工厂包装数量: 300
子类别: Transistors
MD1802FX
ST(意法半导体)
ISOWATT218FX
无铅环保型
直插式
单件包装
NPN型
: 9 V
: 9 V
: - 65 C
: + 150 C