US6X8TR 双极结型晶体管

US6X8TR

Complex Midium Power Transistor

Features US6X8TR

1)High current

2)Low saturation voltage

VCE(sat) : max.350mV

at IC=500mA/IB=25mA

Electrical characteristics (Ta = 25°C) US6X8TR

Parameter Symbol Conditions

Values Unit Min. Typ. Max.

Collector-base breakdown voltage

BVCBO IC = 10μA 30 - - V

Collector-emitter breakdown voltage

BVCEO IC = 1mA 30 - - V

Emitter-base breakdown voltage BVEBO IE = 10μA 6 - - V

Collector cut-off current ICBO VCB = 30V - - 100 nA

Emitter cut-off current IEBO VEB = 6V - - 100 nA

Collector-emitter saturation voltage VCE(sat) IC = 500mA, IB = 25mA - 120 350 mV

DC current gain hFE VCE = 2V, IC = 100mA 270 - 680 -

Transition frequency fT VCE = 2V, IE = -100mA, f = 100MHz - 320 - MHz

Output capacitance Cob VCB = 10V, IE = 0A, f = 1MHz - 7 - pF

Absolute maximum ratings (Ta = 25°C) US6X8TR

Parameter Symbol Values Unit

Collector-base voltage VCBO 30 V

Collector-emitter voltage VCEO 30 V

Emitter-base voltage VEBO 6 V

Collector current IC 1 A ICP *1 2 A

Power dissipation PD

*2 0.4 W/Total PD

*3*4 1.0 W/Total

Junction temperature Tj 150 ℃

Range of storage temperature Tstg -55 to +150 ℃