BUL128 双极结型晶体管

BUL128

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

双极晶体管 - 双极结型晶体管(BJT) NPN Hi-Volt Fast Sw

■ STMicroelectronics PREFERRED SALESTYPE

■ NPN TRANSISTOR

■ HIGH VOLTAGE CAPABILITY

■ LOW SPREAD OF DYNAMIC PARAMETERS

■ MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION

■ VERY HIGH SWITCHING SPEED

APPLICATIONS:

■ ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING

DESCRIPTION BUL128

The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability.

It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.

The device is designed for use in lighting applications and low cost switch-mode power supplies.

型号: BUL128

制造商: STMicroelectronics 

产品种类: 双极晶体管 - 双极结型晶体管(BJT) 

RoHS:  无铅环保  

安装风格: Through Hole 

封装 / 箱体: TO-220-3 

晶体管极性: NPN 

配置: Single 

集电极—发射极最大电压 VCEO: 400 V 

集电极—基极电压 VCBO: 700 V 

发射极 - 基极电压 VEBO: 9 V 

集电极—射极饱和电压: 1.5 V 

最大直流电集电极电流: 4 A 

最小工作温度: - 65 C 

最大工作温度: + 150 C 

系列: BUL128 

直流电流增益 hFE 最大值: 28  

高度: 9.15 mm (Max)  

长度: 10.4 mm (Max)  

封装: Tube  

宽度: 4.6 mm (Max)  

商标: STMicroelectronics  

集电极连续电流: 4 A  

直流集电极/Base Gain hfe Min: 14  

Pd-功率耗散: 70 W  

产品类型: BJTs - Bipolar Transistors  

工厂包装数量: 50  

子类别: Transistors  

单位重量: 6 g