BFU768F,115 射频管 NXP

BFU768F,115

射频(RF)双极晶体管 4-pin Dual-Emitter Microwave Transistor

NPN wideband silicon germanium RF transistor

General description  BFU768F

NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

Features and benefits BFU768F

 Low noise high linearity RF transistor

 110 GHz fT silicon germanium technology

 Optimal linearity for low current and high gain

 Low minimum noise figure of 0.50 dB at 2.4 GHz and 0.74 dB at 5.8 GHz

 Low component count Wi-Fi LNA application circuits available for 2.4 GHz ISM band and 4.9 GHz to 5.9 GHz U-NII band, with optimized RF performance:

 Low current: 10.8 mA

 Noise figure < 1.2 dB

 Gain: 13.1 dB at 2.4 GHz, 12.2 dB at 5 GHz

 High IP3: 15.7 dBm at 2.4 GHz, 18.8 dBm at 5 GHz

 Very fast on/off times

 Unconditionally stable

 Higher IP3, higher gain or lower noise figure possible with different application circuits

Applications  BFU768F

 High linearity applications 

 Medium output power applications

 Wi-Fi / WLAN / WiMAX

 ZigBee

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices.

Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards.