NSV40200LT1G 双极晶体管 ON

NSV40200LT1G

双极晶体管 - 双极结型晶体管(BJT) LESHANBE (CN1) XTR

40 V, 2.0 A, Low VCE(sat)  PNP Transistor

NSV40200LT1G ON Semiconductor’s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.

NSV40200LT1G Features

• NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

型号: NSV40200LT1G

制造商: ON Semiconductor 

产品种类: 双极晶体管 - 双极结型晶体管(BJT) 

RoHS:  无铅环保  

安装风格: SMD/SMT 

封装 / 箱体: SOT-23-3 

晶体管极性: PNP 

配置: Single 

集电极—发射极最大电压 VCEO: - 40 V 

集电极—基极电压 VCBO: - 40 V 

发射极 - 基极电压 VEBO: - 7 V 

集电极—射极饱和电压: - 0.135 V 

最大直流电集电极电流: - 4 A 

增益带宽产品fT: 100 MHz 

最小工作温度: - 55 ℃ 

最大工作温度: + 150 ℃ 

系列: NSS40200L 

封装: Cut Tape  

包装: Reel  

商标: ON Semiconductor  

CNHTS: 8541210000  

直流集电极/Base Gain hfe Min: 250 at - 10 mA at - 2 V  

HTS Code: 8541210095  

MXHTS: 85412101  

Pd-功率耗散: 710 mW  

产品类型: BJTs - Bipolar Transistors  

资格: AEC-Q101  

工厂包装数量: 3000  

子类别: Transistors  

TARIC: 8541210000  

单位重量: 8 mg