BC846BPDW1T1G 双极晶体管 ON

BC846BPDW1T1G

双极晶体管 - 双极结型晶体管(BJT) 100mA 80V Dual Complementary

Dual General Purpose  Transistors  NPN/PNP Duals

These BC846BPDW1T1G transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications.

BC846BPDW1T1G Features

• S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

型号: BC846BPDW1T1G

制造商: ON Semiconductor 

产品种类: 双极晶体管 - 双极结型晶体管(BJT) 

RoHS:  无铅环保  

安装风格: SMD/SMT 

封装 / 箱体: SC-70-6 

晶体管极性: NPN, PNP 

配置: Dual 

集电极—发射极最大电压 VCEO: 65 V 

集电极—基极电压 VCBO: 80 V 

发射极 - 基极电压 VEBO: 6 V 

集电极—射极饱和电压: 0.6 V 

最大直流电集电极电流: 0.1 A 

增益带宽产品fT: 100 MHz 

最小工作温度: - 55 ℃ 

最大工作温度: + 150 ℃ 

系列: BC846BPDW1 

高度: 0.9 mm  

长度: 2 mm  

封装: Cut Tape  

封装: Reel  

宽度: 1.25 mm  

商标: ON Semiconductor  

集电极连续电流: 0.1 A  

CNHTS: 8541210000  

直流集电极/Base Gain hfe Min: 150  

HTS Code: 8541210075  

MXHTS: 85412101  

Pd-功率耗散: 380 mW  

产品类型: BJTs - Bipolar Transistors  

资格: AEC-Q101  

工厂包装数量: 3000  

子类别: Transistors  

TARIC: 8541210000  

单位重量: 28 mg