2SC5810(TE12L,F) 双极晶体管

2SC5810(TE12L,F)

双极晶体管 - 双极结型晶体管(BJT) Power Trans 100V 0.17V Vce 85ns

High-Speed Switching Applications  DC-DC Converter Applications  Strobe Applications 2SC5810

• High DC current gain: hFE = 400 to 1000 (IC = 0.1 A)

• Low collector-emitter saturation voltage: VCE (sat) = 0.17 V (max)

• High-speed switching: tf = 85 ns (typ.)

Electrical Characteristics (Ta = 25°C) 2SC5810

Characteristics Symbol Test Condition Min Typ. Max Unit  Collector cut-off current ICBO VCB = 100 V, IE = 0 ― ― 100 nA  Emitter cut-off current IEBO VEB = 7 V, IC = 0 ― ― 100 nA  Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 50 ― ― V  hFE (1) VCE = 2 V, IC = 0.1 A 400 ― 1000  DC current gain  hFE (2) VCE = 2 V, IC = 0.3 A 200 ― ―  Collector-emitter saturation voltage VCE (sat) IC = 300 mA, IB = 6 mA ― ― 0.17 V  Base-emitter saturation voltage VBE (sat) IC = 300 mA, IB = 6 mA ― ― 1.10 V  Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz ― 5 ― pF  Rise time tr ― 35 ⎯  Switching time Storage time tstg ― 680 ―  Fall time tf  See Figure 1.  VCC ≈ 30 V, RL = 100 Ω  IB1 = 10 mA,IB2 = 10 mA ― 85 ―  ns

Absolute Maximum Ratings (Ta = 25°C) 2SC5810

Characteristics Symbol Rating Unit  Collector-base voltage VCBO 100 V  VCEX 80  Collector-emitter voltage  VCEO 50  V  Emitter-base voltage VEBO 7 V  DC IC 1.0  Collector current  Pulse ICP 2.0  A  Base current IB 0.1 A  DC 2.0 Collector power  dissipation t = 10 s  PC (Note 1)  1.0  W  Junction temperature Tj 150 °C  Storage temperature range Tstg −55 to 150 °C