DTC114YET1G 晶体管 ON

DTC114YET1G

双极晶体管 - 预偏置 100mA 50V BRT NPN

NPN Transistors with Monolithic Bias  Resistor Network

This DTC114YET1G series of digital transistors is designed to replace a single  device and its external resistor bias network. The Bias Resistor  Transistor (BRT) contains a single transistor with a monolithic bias  network consisting of two resistors; a series base resistor and a  base−emitter resistor. The BRT eliminates these individual  components by integrating them into a single device. The use of a BRT  can reduce both system cost and board space.

DTC114YET1G Features

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

• S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

型号: DTC114YET1G

制造商: ON Semiconductor 

产品种类: 双极晶体管 - 预偏置 

RoHS:  无铅环保  

配置: Single 

晶体管极性: NPN 

典型输入电阻器: 10 kOhms 

典型电阻器比率: 0.21 

安装风格: SMD/SMT 

封装 / 箱体: SC-75-3 

直流集电极/Base Gain hfe Min: 80 

集电极—发射极最大电压 VCEO: 50 V 

集电极连续电流: 0.1 A 

峰值直流集电极电流: 100 mA 

Pd-功率耗散: 200 mW (1/5 W) 

最小工作温度: - 55 ℃ 

最大工作温度: + 150 ℃ 

系列: DTC114YE 

封装: Cut Tape 

封装: Reel 

直流电流增益 hFE 最大值: 80  

高度: 0.75 mm  

长度: 1.6 mm  

宽度: 0.8 mm  

商标: ON Semiconductor  

CNHTS: 8541210000  

HTS Code: 8541210095  

MXHTS: 85412101  

产品类型: BJTs - Bipolar Transistors - Pre-Biased  

工厂包装数量: 3000  

子类别: Transistors  

TARIC: 8541210000  

单位重量: 2.510 mg