MRF24300NR3 高频管 NXP

MRF24300NR3

射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF POWER LDMOS TRANSISTOR, 2450 MHz, 300 W, 32 V

RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET

This MRF24300NR3 300 W CW transistor is designed for industrial, scientific, medical (ISM) applications at 2450 MHz. This device is suitable for use in CW, pulse and linear applications. This high gain, high efficiency device is targeted to replace industrial magnetrons and will provide longer life and ease of use.

1. Measured in 2450 MHz reference circuit.                                                                                                                                     

Features MRF24300NR3

• Characterized with series equivalent large--signal impedance parameters

• Internally matched for ease of use

• Qualified for operation at 32 Vdc

• Integrated ESD protection

• Low thermal resistance

Target Applications MRF24300NR3

• Industrial heating:

– Sterilization

– Pasteurization

• Industrial drying

• Moisture--leveling process

• Curing

• Welding

• Heat sealing

• Microwave ablation

• Renal denervation

• Diathermy