MRFE6VP5300NR1 射频管 NXP

MRFE6VP5300NR1

High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs

射频金属氧化物半导体场效应(RF MOSFET)晶体管 WIDEBAND RF POWER LDMOS TRANSISTOR, 1.8--600 MHz, 300 W CW, 50 V

These high ruggedness devices are designed for use in high VSWR

industrial (including laser and plasma exciters), broadcast (analog and digital),

aerospace and radio/land mobile applications. They are unmatched input and

output designs allowing wide frequency range utilization, between 1.8 and

600 MHz. MRFE6VP5300NR1

MRFE6VP5300NR1 1.8–600 MHz, 300 W CW, 50 V WIDEBAND RF POWER LDMOS TRANSISTORS

1. Measured in 87.5–108 MHz broadband reference circuit.

2. Measured in 230 MHz narrowband test circuit.

3. The values shown are the minimum measured performance numbers across the

indicated frequency range.

Features MRFE6VP5300NR1

 Wide Operating Frequency Range

 Extreme Ruggedness

 Unmatched Input and Output Allowing Wide Frequency Range Utilization

 Integrated Stability Enhancements

 Low Thermal Resistance

 Integrated ESD Protection Circuitry

 In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13--inch Reel.