图文详情
产品属性
相关推荐
MPC5746R-252DS
射频金属氧化物半导体场效应(RF MOSFET)晶体管 AF7 2.6GHZ NI880X-4L4S
RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET
This 32 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2496 to 2690 MHz. MPC5746R-252DS
Typical Doherty Single--Carrier W--CDMA Performance: VDD = 28 Vdc, IDQA = 500 mA, VGSB = 0.6 Vdc, Pout = 32 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Features MPC5746R-252DS
Advanced High Performance In--Package Doherty
Greater Negative Gate--Source Voltage Range for Improved Class C Operation
Designed for Digital Predistortion Error Correction Systems
In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13--inch Reel.
Refer to the following documents, software and tools to aid your design process.
Application Notes MPC5746R-252DS
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
Electromigration MTTF Calculator
RF High Power Model
.s2p File
Development Tools
Printed Circuit Boards
MPC5746R-252DS
NXP(恩智浦)
NI--880XS--4L4S
无铅环保型
直插式
单件包装
Reel
250
-40 ℃
150 ℃