A2T09D400-23NR6 射频管 NXP

A2T09D400-23NR6

RF Power LDMOS Transistor

N--Channel Enhancement--Mode Lateral MOSFET

射频金属氧化物半导体场效应(RF MOSFET)晶体管 AIRFAST RF POWER LDMOS TRANSISTOR 716-960 MHz, 93 W AVG., 28 V

This 93 W symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 716 to 960 MHz.

800 MHz

 Typical Doherty Single--Carrier W--CDMA Performance: VDD = 28 Vdc,

IDQA = 1200 mA, VGSB = 1.12 Vdc, Pout = 93 W Avg., Input Signal

PAR = 9.9 dB @ 0.01% Probability on CCDF.

Features A2T09D400-23NR6

 Production Tested in a Symmetrical Doherty Configuration

 Greater Negative Gate--Source Voltage Range for Improved Class C Operation

 Designed for Digital Predistortion Error Correction Systems A2T09D400-23NR6

型号: A2T09D400-23NR6 

制造商: NXP 

产品种类: 射频金属氧化物半导体场效应(RF MOSFET)晶体管 

晶体管极性: N-Channel 

Id-连续漏极电流: 2.7 A 

Vds-漏源极击穿电压: - 500 mV, 70 V 

技术: Si 

增益: 17.9 dB 

输出功率: 93 W 

最小工作温度: - 40 ℃ 

最大工作温度: + 150 ℃ 

安装风格: SMD/SMT 

封装 / 箱体: OM-1230-4L2S-7 

封装: Cut Tape 

封装: Reel 

工作频率: 716 MHz to 960 MHz  

类型: RF Power MOSFET  

商标: NXP / Freescale  

通道数量: 2 Channel  

产品类型: RF MOSFET Transistors  

工厂包装数量: 150  

子类别: MOSFETs  

Vgs - 栅极-源极电压: - 6 V, 10 V  

Vgs th-栅源极阈值电压: 1.5 V  

单位重量: 5.285 g